RANDOM ACCESS THERMAL MAGNETIC ELEMENT WITH LONGER SERVICE LIFE Russian patent published in 2015 - IPC G11C11/15 

FIELD: physics, computer engineering.

SUBSTANCE: present invention provides a magnetic memory element (1) which is suitable for a writing operation with thermal switching, comprising a current line (4) in electrical communication with one end of a magnetic tunnel junction (2), where the magnetic tunnel junction (2) comprises: a first ferromagnetic layer (21), having a fixed magnetisation; a second ferromagnetic layer (23) having magnetisation which can be freely set up with a given high temperature threshold; and a tunnelling barrier (22) which is provided between the first and second ferromagnetic layers (21, 23); where the current line (4) is adapted to transmit heating current (31) through the magnetic tunnel junction (2) during a write operation; where said magnetic tunnel junction (2) further comprises at least one heating element (25, 26) adapted to generate heat when heating current (31) passes through the magnetic tunnel junction (2); and a thermal barrier (30) in series with said at least one heating element (25, 26), where said thermal barrier (30) is adapted to limit heat generated by said at least one heating element (25, 26) within the magnetic tunnel junction (2).

EFFECT: producing a magnetic memory element (1) suitable for a write operation with thermal switching.

11 cl, 2 dwg