FIELD: electrical engineering.
SUBSTANCE: semiconductor device includes: groove electrode groove formed in contact with drift area, pocket area and source area; a gate electrode formed on the surface of the groove electrode groove through the insulating film; groove of source electrode in contact with groove of gate electrode; a source electrode electrically connected to the source region; and a gate conductor electrically isolated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.
EFFECT: invention provides a semiconductor device adapted to reduce variation of threshold voltage.
8 cl, 20 dwg
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