SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURING Russian patent published in 2020 - IPC H01L29/78 H01L21/336 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a semiconductor device and a method for production thereof. Semiconductor device comprises first drift region (4) with first conductivity type formed on first main surface of substrate (1), and second drift region (41) with first conductivity type formed on first main surface of substrate (1), wherein the second drift area is formed so that it reaches a deeper position of substrate (1) than the position of the first drift area (4). Additionally, the pocket area with the second conductivity type in contact with the second drift area is included, the source area with the first conductivity type, formed so that it passes in the direction perpendicular to the pocket area surface, and drain area with first conductivity type, separated from pocket area, wherein drain area is formed so that it passes in direction perpendicular to surface of first drift area. Since electron flow after passage through channel can expand, resistance can decrease.

EFFECT: disclosed is a method of making a semiconductor device which allows reducing channel resistance without increasing the depth of the entire drift region.

16 cl, 39 dwg