OPTICALLY CONTROLLED MEMRISTOR BASED ON THE ITO/ZrO(Y)/Si MDS STRUCTURE WITH Ge NANOISLANDS Russian patent published in 2023 - IPC H10N70/10 

Abstract RU 2803506 C1

FIELD: electrical engineering.

SUBSTANCE: solid-state electrical devices with a nanoscale active medium in the form of Ge nanoislands on Si, which are electric field concentrators, concerns a method for controlling the operation of a metal-dielectric-semiconductor (MDS) memristor capacitor structure using illumination.

EFFECT: used to create a new generation of non-volatile memory devices in the fields of memristive optoelectronics, spintronics, neuromorphic computing systems and to solve a number of topical problems of computer technology, in particular in the areas of artificial intelligence, neuromorphic computing.

1 cl, 3 dwg

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Authors

Koriazhkina Mariia Nikolaevna

Filatov Dmitrii Olegovich

Shenina Mariia Evgenevna

Antonov Ivan Nikolaevich

Kruglov Aleksandr Valerevich

Ershov Aleksei Valentinovich

Gorshkov Aleksei Pavlovich

Denisov Sergei Aleksandrovich

Chalkov Vadim Iurevich

Shengurov Vladimir Gennadevich

Dates

2023-09-14Published

2022-12-06Filed