MICROELECTROMECHANICAL PRESSURE SENSOR Russian patent published in 2019 - IPC G01L7/08 G01L19/06 

FIELD: measuring equipment.

SUBSTANCE: invention relates to instrumentation in the field of microsystem equipment. Pressure sensor contains a housing, a sensitive element, the membrane of which is located on a support crystal, in which a through hole and heat-compensating elements are made. Support crystal and the membrane of the sensitive element are made from monocrystalline silicon. Support crystal is conjugated with the sensor housing by means of a connecting tube. According to the invention, the heat-compensating elements are planar in form of etched-out recesses of rectangular cross-section in the support crystal on the surface opposite to the position of the sensitive element, wherein the central element has a circumferential shape, axis of rotation of which coincides with the axis of symmetry of the support crystal, the element located on the periphery of the support crystal has the shape of a contour of a circle with a center coinciding with the axis of symmetry of the support crystal, with four cuts in the form of arcs of circles of smaller radius than the radius of the circle conjugated with the contour of the circle. Circle centers of smaller radius lie on spatial diagonals of the support crystal behind the contour of the circle.

EFFECT: higher reliability and stability of operation, resolution of output characteristics and accuracy of micro pressure sensor.

1 cl, 3 dwg