LOW-PRESSURE PLASMA-CHEMICAL REACTOR PROVIDING HIGH-DENSITY PLASMA FOR CARRYING OUT AN ETCHING AND DEPOSITION PROCESS Russian patent published in 2023 - IPC C23C16/52 H01L21/306 C23C16/40 

FIELD: reactors.

SUBSTANCE: low-pressure plasma-chemical reactor providing high-density plasma for carrying out an etching or deposition process. This reactor contains a working chamber and a plasma formation module coupled to it, while in the working chamber opposite the plasma formation module there is a substrate holder connected to an RF generator and coupled to a temperature stabilizer. Inside the working chamber, at a distance of 3-10 mm from its side walls, a dielectric ring is installed on wedges, on the outer side of which a conductive metal element is formed, connected to a constant voltage source. The conductive metal element of the dielectric ring and the wires supplying a constant voltage to it are electrically isolated from the plasma and grounded surfaces of the working chamber.

EFFECT: increased productivity of processes implemented in reactors and reduced cost of their operation and maintenance.

6 cl, 3 dwg