FIELD: physics.
SUBSTANCE: sensor (100) includes: carrier substrate (101), thin-film transistor (102) (TFT) located on the carrier substrate and including electrode (1025) of the source, first insulating layer (106) located on TFT (102) and comprising first through hole (1071) passing through first insulating layer (106), conductive layer (1031) located in first through hole (1071) and on part of first insulation layer (106) and electrically connected to source electrode (1025) through first through hole (1071), biasing electrode (1032) located on first insulating layer (106) and separate from conductive layer (1031), active reading layer (1033), respectively, connected to conductive layer (1031) and biasing electrode (1032), and auxiliary conducting layer (1034) located on conductive layer (1031). Sensor and its manufacturing method improve conductivity and provide normal signal transmission by arrangement of auxiliary conducting layer (1034) on conducting layer without addition of processes.
EFFECT: sensor, method of its manufacturing and electronic device are disclosed.
20 cl, 4 dwg
