OPERATIONAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS Russian patent published in 2022 - IPC H03F3/45 

FIELD: analogue microelectronics.

SUBSTANCE: invention relates to analogue microelectronics and can be used in various analogue and analogue-to-digital interfaces — active RC filters, normalizing converters, etc., including those working in conditions of low temperatures and exposure to radiation. Technical result is achieved due to creation of conditions under which at current output (9) of the device there is provided complete mutual compensation of static current of the dynamic load circuit (15) and the drain of fourth (14) auxiliary field-effect transistor. This condition is satisfied by special construction of auxiliary reference current source (8) based on two parallel connected elementary reference current sources on third (22), fourth (23), fifth (24) and sixth (25) additional field-effect transistors, as well as introduction of additional sources of reference current on first (18) and second (20) additional field-effect transistors.

EFFECT: creation of radiation-resistant and low-temperature operational amplifier, which due to high self-adjusting symmetry of the static mode on drain currents and gate-drain voltages of the used field transistors provides a low level of the systematic component of zero offset voltage and increased values of the voltage gain.

8 cl, 13 dwg