OPERATIONAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS Russian patent published in 2022 - IPC H03F3/34 

FIELD: radio engineering; analogue microelectronics.

SUBSTANCE: known operational amplifier on complementary field-effect transistors, between combined sources of first (4) and third (6) input field-effect transistors and second (14) bus of a power supply source, includes third (16) current-stabilizing two-pole on a field-effect transistor, between combined sources of second (5) and fourth (7) input field-effect transistors and first (10) bus of the power supply source, includes fourth (17) current-stabilizing two-pole on the field-effect transistor, wherein output static currents of first (11), second (15), third (16) and fourth (17) current-stabilizing two-poles are the same in a wide range of external effects and changes in supply voltages.

EFFECT: creation of a radiation-resistant and low-temperature JFet operational amplifier, which provides a low level of a systematic component of zero offset voltage and increased values of the voltage gain.

6 cl, 7 dwg