METHOD OF PRODUCING FUNCTIONAL THREE-DIMENSIONAL COMPONENT OF OPTOELECTRONIC DEVICE AND FUNCTIONAL THREE-DIMENSIONAL COMPONENT OF OPTOELECTRONIC DEVICE Russian patent published in 2020 - IPC C30B23/08 C30B29/38 C30B29/40 C30B29/62 C30B33/06 C30B33/10 B82B3/00 B82Y20/00 B82Y40/00 G02B1/02 H01L21/02 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices and can be used in industrial production of light-emitting devices and photosensitive elements. Method of producing functional three-dimensional component (FTC) of optoelectronic device is characterized by that on silicon substrate 1 surface heated to temperature of 620–710 °C, by molecular-beam epitaxy an array of unidirectional filamentary nanocrystals (FNC) of III-nitride materials is formed to form an array of nanocrystals 2, having a variable in height cross-section with thinning on both ends and partially fused in middle-height zone 3, followed by separation of the obtained array from the substrate by etching with an aqueous solution which includes hydrofluoric acid and nitric acid. Unsubstrated FNC array obtained by separation from substrate, is intended for use as a functional three-dimensional component of an optoelectronic device. Functional three-dimensional component can be an array of filamentary nanocrystals of indium-gallium nitride, or indium nitride, or gallium nitride.

EFFECT: providing structural strength (integrity) of FTC, formed in the form of array of FNC III-nitride materials, sufficient for its functioning after separation from substrate with high optical quality of FNC material.

9 cl, 7 dwg