GROWTH OF GaN NANOTUBES, ACTIVATED WITH Si DOPANT ON Si SUBSTRATES WITH THIN AIN BUFFER LAYER Russian patent published in 2020 - IPC B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention can be used for synthesis of hollow quasi-one-dimensional nanostructures. Essence of the invention is that a method of growing GaN nanotubes, activated by a dopant Si on an Si substrate with a thin AlN buffer layer, includes deposition of materials by molecular-beam epitaxy, before sedimentation of growth material, oxide layer is removed in conditions of superhigh vacuum, then epitaxial deposition of buffer layer on growth substrate, epitaxial deposition of materials of a synthesized nanotube on a growth substrate, epitaxial deposition on a growth substrate of atoms of an element, which, interacting with surface atoms of a growing crystal, affects the kinetics and/or dynamics of the growth process.

EFFECT: technical result is improved quality of crystal lattice and cut quality.

3 cl, 2 dwg