FIELD: technological processes.
SUBSTANCE: invention can be used to form arrays of gold nanoparticles on the surface of silicon wafers. Essence of invention consists in that method of depositing colloidal gold nanoparticles on surface of silicon semiconductor plates involves nanoparticles having a negative charge in colloidal solution can be deposited on the surface of silicon plates due to preliminary ion-plasma treatment processes, as a result of which a positive charge appears on the surface of the plates.
EFFECT: possibility of controlled application of gold particles on the surface of silicon semiconductor plates.
1 cl, 3 dwg
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