FIELD: electrical communication engineering.
SUBSTANCE: invention can be used for generation of microwave (UHF) radiation generators made in the Gunn diode geometry. Essence of the invention is that the method of creating a Gunn diode based on a heterostructure of gallium nitride (GaN) with a given alloying profile, synthesized on a semiconductor substrate, wherein the active region of the device is formed as an array of filamentary nanocrystals (NOC).
EFFECT: possibility of increasing maximum operating frequency of the device.
4 cl, 3 dwg
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