METHOD FOR MANUFACTURING NANO-COLUMN HETEROSTRUCTURE BASED ON III-N COMPOUNDS Russian patent published in 2021 - IPC H01L21/02 B82Y40/00 

FIELD: semiconductor optoelectronics.

SUBSTANCE: invention relates to the field of semiconductor optoelectronics; it can be used in quantum cryptography and quantum computing systems, in the creation of precision spectral equipment and optical power standards. A method for obtaining nano-column heterostructures based on III-N compounds includes preparation of sapphire substrate, etching of substrate at a temperature of 250-300°C with a mixture of H₂SO₄ and H₃PO₄ acids for 6-10 minutes through a dielectric mask with regularly spaced holes formed by lithography, removal of the dielectric mask and etching of substrate at a temperature of 250-300°C with a mixture of H₂SO₄ and H₃PO₄ acids for 1-3 minutes, annealing of etched profiled substrate, nitridization of the surface of profiled substrate by molecular beam epitaxy, sequential cultivation on profiled substrate by plasma-activated molecular beam epitaxy of a germ layer of GaN with a thickness of 40-80 nm of nano-column heterostructure under metal-enriched growth conditions, cultivation of main layers of GaN of the nano-column heterostructure, layers of active regions of InGaN of the nano-column heterostructure and cultivation of outer shells of AlGaN of the nano-column heterostructure under nitrogen-enriched growth conditions.

EFFECT: invention provides for the formation of an area-homogeneous highly discharged array of nano-column heterostructures, which at the same time are optically isolated and can be used to create devices emitting single photons.

5 cl, 2 dwg