CONTACT POSITION SENSOR Russian patent published in 2020 - IPC G01B11/14 G01B11/30 

FIELD: measuring equipment.

SUBSTANCE: invention relates to the field of measurement equipment and concerns a contact position sensor, which can be used, for example, in milling machines and processing centers with numerical program control. Contact position sensor includes a shank, a housing connected to it, comprising a piezoelectric element, a device for determining the position of an element in contact with the analyzed surface, information transfer unit, a galvanic cell and an element in contact with the surface which is in contact with the surface, 2–5 % of the length of the piezoelectric element made in the form of a tube, are fixed in a through hole in the housing end surface, which is not connected to the shank end, and free part of piezoelectric element is located inside the same hole in housing. Sensor further comprises a hermetically connected casing with an end face surface not connected to the shank end, having a possibility of changing its height, and the surface contacting element is made in the form of a detachable cantilever, consisting of a base and capable of reflecting optical radiation of a cantilever console connected to it with a probe on its non-attached end, with possibility of cantilever base fixation by means of mounting element connected to unfixed surface of piezoelectric cell of fit element. At that, cantilever is located inside casing with possibility of probe contact with analyzed surface, and casing in free state protrudes beyond cantilever dimensions, and as a device for determining the position of an element in contact with the analyzed surface, the sensor has an optical radiation source and a photodetector, which are fixed inside the housing, and the end surface of the housing not connected to the shank end has a through hole for optical radiation incident on the cantilever console and a through hole for supply of optical radiation reflected from the cantilever console to the photodetector.

EFFECT: high sensitivity of measurements along the vertical axis to 1 nm near the sensor.

1 cl, 1 dwg