FIELD: technological processes.
SUBSTANCE: invention relates to the field of thermo-chemical treatment of materials. Method of plasma nitriding of silicon oxide in a solid phase in a controlled medium involves exposure of the said silicon oxide to low-temperature nitrogen plasma at atmospheric pressure for 7–10 seconds. Low-temperature nitric plasma is generated by direct-current plasmatron with mass-average temperature of plasma flow 7÷10 kK.
EFFECT: considerable reduction of the period of nitration of zinc oxide in the solid phase, approximately by 3 orders, and obtaining of high performance characteristics of oxide compounds.
1 cl, 1 dwg
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