METHOD OF FORMING GALLIUM NITRIDE TEMPLATE WITH SEMIPOLAR (20-23) ORIENTATION ON SILICON SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE MADE USING SAID METHOD Russian patent published in 2015 - IPC H01L33/30 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: method of forming a template of a semiconductor light-emitting device is characterised by forming, on a silicon substrate in a reactor with orientation (100), disoriented by 1-10° in the <011> direction, nanosteps on the surface of said substrate by heating to 1270-1290°C; forming, in a carbon monoxide atmosphere at each step along its edge by solid-phase epitaxy, a longitudinal wedge-like silicon carbide protrusion having a vertex which protrudes from the surface of the step, and having an inclined face which reaches the surface of lower-lying step to form a slope angle of 30-40°; synthesizing, on the formed corrugated surface by hydride vapour-phase epitaxy, a buffer layer of aluminium nitride on which, through hydride vapour-phase epitaxy, a gallium nitride layer is formed, having semipolar (20-23) orientation; removing the silicon substrate by etching. The semiconductor light-emitting device comprises electrodes and a template obtained according to the method, on which active layers of the device are formed, wherein the template has in its base a gallium nitride layer with semipolar (20-23) orientation, formed on the buffer layer of aluminium nitride, deposited on the corrugated surface of the silicon carbide layer.

EFFECT: invention enables to form a template with a thick layer of gallium nitride with semipolar orientation on a cheap and readily available silicon substrate.

3 cl, 1 tbl, 5 dwg