METHOD FOR MEASURING THERMAL RESISTANCE OF TRANSITION-HOUSING AND THERMAL CONSTANTS OF TRANSITION-HOUSING OF CRYSTALS OF SEMICONDUCTOR ARTICLES IN AN ELECTRONIC MODULE Russian patent published in 2020 - IPC G01R31/28 G01R31/26 G01N25/18 G01K13/00 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement of thermal parameters of crystals of bare semiconductor devices in electronic modules and can be used to control the quality of assembly of electronic modules both at the stages of development and production of electronic modules, and at input monitoring of enterprises-consumers of electronic modules when assessing their temperature reserves. Essence of the invention consists in fact that an electronic module with two active elements in form of bare semiconductor devices, which is at initial temperature T_0. At the moment of time t₀₁, a pulse of heating power of the specified level P₀₁ of duration t_P1≈(3 ÷5)τ_Tt-h is supplied, where τ_Tt-h is an approximate value of the thermal time constant of transition-housing of crystals of semiconductor devices. Temperature increments ΔT₁₁(t₁) and ΔT₂₁(t₁) of the active region (surface) of crystals of semiconductor articles are measured through a time interval t₁≈τ_Tt-h after supply of heating power pulse and increment ΔT₁₁(t_P1) and ΔT₂₁(t_P1). At the end of the heating power pulse for a time t_cool~τ_Th-s, the electronic module is left in the off state for its cooling to the initial temperature, then at time t_02, P₀₂ heating power pulse with duration t_P2=t₁≈τ_Tt-h. Temperature increment ΔT₁₂(t₁) and ΔT₂₂(t₁) of the active region (surface) of crystals of semiconductor articles are measured at the moment of termination of the heating power pulse, i.e. at the same time interval t₁ after supply of the heating power pulse. Results of measurements are used to calculate thermal resistance of the transition-housing of crystals of semiconductor products using formulas where and exact values of thermal constants of time transition-housing of crystals of semiconductor products are calculated using formulas

EFFECT: reduced error and possibility of measuring thermal parameters of crystals of galvanically bonded semiconductor articles in an electronic module when it is impossible to separately measure power consumed by each semiconductor product separately and, as a result, higher reliability of electronic modules assembly quality control.

1 cl, 2 dwg