FIELD: measuring.
SUBSTANCE: invention relates to the technology for measuring the heat parameters of electronic modules with uncased semiconductor products (SCP) and can be used for controlling the quality of assembly of electronic modules with two crystals of uncased SCPs both at the stages of development and production of electronic modules and at the input control of consumer enterprises of electronic modules in evaluation of the temperature reserves thereof. The substance of the invention consists in the fact that the electronic module with two uncased semiconductor products as active elements, at an initial temperature T0, at time t01, is supplied with a pulse with a heating power of a preset level of P01 with a duration tI1≈τTn-k, wherein τTn-k is the approximate value of the junction-to-case heat time constant of crystals of the semiconductor products, the temperature increment ΔT11(tI1) and ΔT21(tI1) of the active area (surface) of the crystal of the first and second semiconductor products, respectively, are measured relative to the initial temperature at the end of the first pulse of the heating power, after the end of the first pulse of the heating power, the electronic module is cooled to the initial temperature, then at the time t02 a second pulse of the heating power at the level of P02 with the duration tI2≈(3÷5)τTn-k is supplied thereto and the temperature increment ΔT12(t1) and ΔT22(tI1) of the crystals of the first and second semiconductor products, respectively, are measured again after a time interval tI1, and ΔT12(tI2) and ΔT22(tI2) at the end of the second pulse of the heating power, the junction-to-case heat time constants of the semiconductor products are calculated according to the formulas
, 
,
and the junction-to-case heat resistances - according to the formulas
, 
,
wherein P12=aP11, 
, 
, 
EFFECT: invention measures the heat parameters of electronic modules with uncased SCP.
1 cl, 2 dwg
