CURRENT MIRROR FOR OPERATION AT LOW TEMPERATURES Russian patent published in 2020 - IPC H03F3/45 

Abstract RU 2720365 C1

FIELD: radio engineering.

SUBSTANCE: invention relates to the field of radio equipment. Current mirror comprises a power supply bus, field-effect transistors, a reference-voltage source, and field-effect transistors with a p-n-junction control (JFET).

EFFECT: technical result consists in creation of both inverting and non-inverting current mirror on complementary field transistors with control p-n-junction for operation at low temperatures, providing for different outputs of inverting and non-inverting input current signal conversion with current transmission ratio greater than one.

4 cl, 9 dwg

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RU 2 720 365 C1

Authors

Bugakova Anna Vitalevna

Prokopenko Nikolaj Nikolaevich

Dates

2020-04-29Published

2019-11-25Filed