NON-INVERTING CURRENT MIRROR ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH PN-JUNCTION CONTROL FOR OPERATION AT LOW TEMPERATURES Russian patent published in 2020 - IPC H03F3/45 H03F3/04 G05F3/26 

FIELD: radio equipment.

SUBSTANCE: current mirror comprises input and output of device, matched with first power supply bus, first input field transistor, source of which is connected to second power supply bus, and drain is connected to device input and gate of second input field transistor, output field transistor, drain of which is connected to device output, reference current source. All said field-effect transistors used are field-effect transistors with pn-junction control (JFET), source of the first JFET input field transistor is connected to the second power supply bus through the reference current source and is connected to the drain of the second input field effect transistor JFET, the gate of the first input field effect transistor JFET is connected to the second power supply bus, source of output JFET of field-effect transistor is connected to source of second JFET of input field-effect transistor, and its gate is connected to source of reference voltage.

EFFECT: technical result consists in provision of non-inverting conversion of input current signal with current transmission ratio greater than one.

4 cl, 9 dwg