FIELD: optoelectronics.
SUBSTANCE: device for producing polarized light with degree of linear polarization of light ~(50–60):1 includes source (1) of pulsed or permanent unpolarised light, in form of, for example, commercial LED based on III-nitrides of blue-green, blue or ultraviolet range (with emission wavelength in range of 380–550 nm), and external polarizing element (2), made in the form of substrate (3) of GaAs with orientation (001), on which there is a layer with thickness of ~150–250 nm, consisting of nanoplates (4) of two-dimensional GaSe crystal, oriented along selected directions <111> GaAs substrates. External polarizing element (2), in form of an array of oriented nanoplates (4) of GaSe, is spontaneously formed when growing a layer of GaSe by molecular beam epitaxy on substrate (3) of GaAs with orientation (001) in the epitaxial growth temperature range TS=500–520 °C.
EFFECT: device has small dimensions, mainly determined by dimensions of non-polarized light source, high efficiency of converting unpolarised radiation into polarized (up to 90 % by intensity) and high degree of linear polarization of light (50:1 and more).
6 cl, 4 dwg
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Authors
Dates
2020-05-21—Published
2019-12-05—Filed