FIELD: electricity.
SUBSTANCE: use for production of semiconductor integrated circuits (IC) used in making magnetic cells, such as, for example, magnetoresistive random-access memory cells (MRAM) and magnetic sensors operating based on the tunnel magnetoresistance (TMR) effect. Essence of invention consists in that method of forming additional permanent magnetic field for cell of magnetic element located in IC, includes the following steps: formation of trenches in the interlevel dielectric layer IC formed on the substrate, the copper filling of the formed trenches by the galvanic deposition method, formation of copper plating layer buried inside dielectric of substrate by removal of excess copper layer from surface of dielectric layer by chemical-mechanical polishing (CMP) with formation of planar surface of substrate, formation of depressions in a layer of copper distribution by means of selective etching of a layer of copper layout by liquid copper etching method, filling the formed depressions with a layer of magnetic material by vacuum spraying with subsequent CMP, wherein the formed magnetic layer provides an additional permanent magnetic field oriented on the cell of the magnetic element.
EFFECT: possibility of forming a constant distribution of magnetic field in a free layer in a magnetic cell.
6 cl, 9 dwg
