FIELD: electrical engineering.
SUBSTANCE: group of inventions relates to the field of electrical engineering. The magnetosensitive sensor contains a magnetic element with a sensitive layer and a given direction of magnetization and an element that forms an external magnetic field acting on the said magnetic element, while the element that forms an external magnetic field is configured to form a displaced magnetic field relative to the said direction of magnetization of the sensitive layer in the range 4°-10° ±10%.
EFFECT: decreased coercive force of the magnetic sensor.
3 cl, 5 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR CREATING SELF-ORIENTED MAGNETIC SENSOR | 2021 |
|
RU2753803C1 |
METHOD OF FORMING A FIXED DISTRIBUTION OF INDUCED MAGNETIC FIELD IN A MAGNETIC STRUCTURE FORMED IN AN INTEGRATED CIRCUIT, AND AN INTEGRATED CIRCUIT COMPRISING A MAGNETIC STRUCTURE | 2019 |
|
RU2723233C1 |
COMBINED ELEMENT OF MAGNETORESISTIVE MEMORY (OPTIONS), WAYS OF READING INFORMATION FROM THE ELEMENT (OPTIONS), WAYS OF RECORDING INFORMATION ON THE ELEMENT (OPTIONS) | 2017 |
|
RU2648948C1 |
RANDOM-ACCESS MAGNETIC MEMORY CELL | 2018 |
|
RU2704732C1 |
THIN-FILM TOROIDAL CORE WITH SHAPE ANISOTROPY, INDUCTANCE COIL AND TRANSFORMER, CONTAINING THEREOF | 2018 |
|
RU2716282C1 |
METHOD OF FORMING MAGNETORESISTIVE MEMORY ELEMENT BASED ON TUNNEL JUNCTION AND STRUCTURE THEREOF | 2012 |
|
RU2522714C2 |
MAGNETIC RANDOM ACCESS MEMORY CELL WITH IMPROVED DISPERSION OF SWITCHING FIELD | 2012 |
|
RU2599956C2 |
MAGNETOELECTRIC ELEMENT FOR NON-VOLATILE MEMORY DEVICES | 2023 |
|
RU2822556C1 |
MAGNETOELECTRIC MEMORY | 2011 |
|
RU2573207C2 |
MAGNETICALLY OPERATED DETECTOR OF SHF RADIATION | 2007 |
|
RU2347296C1 |
Authors
Dates
2021-04-12—Published
2020-09-07—Filed