METHOD FOR FORMING ACTIVE STRUCTURES FOR MICROELECTRONIC DEVICES AND MICROELECTRONIC DEVICE CONTAINING ACTIVE STRUCTURES Russian patent published in 2021 - IPC H01L27/04 G01N27/414 

FIELD: electronics.

SUBSTANCE: invention relates to electronics, in particular to the field of manufacturing sensitive elements of microelectronic devices, in which the sensitive elements are active structures. The method for forming active structures for microelectronic devices on a silicon substrate according to the invention includes the stages of preparing the CMOS substrate (complementary metal-oxide-semiconductor structure), forming a copper wiring in the interlayer dielectric, performing a deepening in the silicon oxide layer by photolithography and plasma-chemical etching, moreover, the recess contains the inner walls and the bottom surface adjacent to the copper wiring, the adhesive layer TaN and the noble metal layer are applied to the outer part of the substrate near the recess, the inner walls and the bottom surface of the recess, the sacrificial layer is applied to the noble metal layer, the chemical-mechanical the sacrificial layer, the noble metal layer and the TaN layer are polished by liquid etching of the sacrificial layer while maintaining the noble metal layer on the inner walls and bottom surface of the recess.

EFFECT: invention ensures elimination of damage to the layer of a noble metal of the active structure due to the deposition of a sacrificial layer on the surface of a sensitive layer of a noble metal.

10 cl, 3 dwg