METHOD FOR FORMING ACTIVE STRUCTURES FOR MICROELECTRONIC APPARATUSES ON A SILICON SUBSTRATE AND MICROELECTRONIC APPARATUS CONTAINING THE FORMED ACTIVE STRUCTURES Russian patent published in 2022 - IPC H01L21/8238 G01N27/414 

FIELD: electronics.

SUBSTANCE: invention relates to electronics, in particular, to the field of manufacturing sensing elements of microelectronic apparatuses, e.g., diagnostic chips, wherein the sensing elements constitute active structures based on alloys of noble metals. The method for forming active structures for microelectronic apparatuses on a silicon substrate includes stages of preparing the CMOS substrate; forming multi-level copper metallisation in the interlevel dielectric of the substrate; manufacturing active structures in the form of recesses in the layer of silicon oxide by the method of photolithography and plasma chemical etching, wherein the recesses comprise inner walls and a bottom surface adjacent to the copper wiring; applying a layer of a noble metal to the side walls and the bottom surface of the recesses; executing the process of chemico-mechanical polishing of the metal, stopping on silicon oxide; applying an organic planarising layer (OPL) to the substrate, filling the recesses; etching the OPL, stopping on the silicon oxide layer, forming a planar surface above the recesses; applying a hydrophobic layer to the surface of the plate; forming a rigid mask by applying sacrificial layers to the formed planar surface; etching the layers of a rigid mask, the hydrophobic layer and the OPL in the recesses, wherein the OPL inside the recesses is etched isotropically, forming protrusions from the hydrophobic layer on the surface of the substrate above the recesses.

EFFECT: invention provides an increase in the efficiency of operation of the active structures due to the prevention of leakage of the electrolyte from the recesses of said structures.

10 cl, 6 dwg