METHOD OF SURFACE MODIFICATION OF SILICON CARBIDE CRYSTALS Russian patent published in 2021 - IPC H01L21/302 B82Y40/00 

FIELD: electronic instrumentation.

SUBSTANCE: invention relates to the technology of electronic instrumentation and namely to methods for modifying the surface of silicon carbide crystals and can be used to obtain mesplanar structures of various facets. In addition, the invention can be used in jewelry to create a multi-planar design of moissonite (silicon carbide) stones. Disclosed is a method for modifying the surface of silicon carbide crystals. The method includes laser irradiation of the surface and anisotropic chemical etching of silicon carbide sides of different orientations. The method helps to control the process of surface modification of silicon carbide crystals and to obtain structures of various shapes and facets for solving various problems associated with the formation of a pattern and its optical properties.

EFFECT: creation of mesplanar silicon carbide structures of various shapes and facets.

1 cl, 1 dwg