METHOD OF MEASURING THE CUT-OFF FREQUENCY OF ELECTROLUMINESCENCE OF LOCAL REGIONS OF A LIGHT-EMITTING HETEROSTRUCTURE Russian patent published in 2020 - IPC G01R31/26 H05B33/08 H05B45/00 

FIELD: measuring equipment.

SUBSTANCE: invention relates to measurement of dynamic characteristics of light-emitting diodes and semiconductor light-emitting structures and can be used for diagnostics of homogeneity of light-emitting heterostructures (LHS) and their characteristics by dynamic properties. Method of measuring electroluminescence boundary frequency of local areas of light-emitting heterostructure, in which through a light-emitting heterostructure a sequence of pulses of electric current with a duty ratio of 2 and an initial repetition rate of several kilohertz is passed, current pulses repetition rate is gradually increased, and at each given current pulse repetition rate F_i, the digital camera records the radiation from the light-emitting heterostructure surface, the obtained digitized images are stored in the computer memory, increasing repetition frequency of current pulses is stopped when average level of brightness of image recorded by digital camera is reduced by 1.5 times relative to value measured at initial frequency, on the light-emitting heterostructure image, a local area is selected and a k-th image is found on which the average brightness of the light-emitting heterostructure selected area in q_gr=1.19 times less than the initial average brightness, and determining for k-th image the boundary frequency ƒ_3dB=F_k electroluminescence of selected local area of light-emitting heterostructure, and in the absence of accurate value q_gr with respect to subsequent images, the cutoff frequency of the electroluminescence of the local region of the light-emitting heterostructure is determined by interpolation by formula.

EFFECT: high information value of diagnosing homogeneity of light-emitting heterostructures based on local dynamic parameters.

1 cl, 1 dwg