METHOD FOR MEASURING INTERNAL QUANTUM OUTPUT OF LIGHT-EMITTING DIODE Russian patent published in 2021 - IPC G01R31/26 

FIELD: measurement.

SUBSTANCE: invention relates to the technique of measuring parameters of semiconductor light-emitting heterostructures and light-emitting diodes based thereon and can be used to control quality of GaN-based light-emitting diodes and their separation according to the level of energy efficiency. Substance of the method consists in the fact that the electroluminescence of the light-emitting diode is excited at two values of direct current I₁ and I₂ corresponding to the growth range on the current dependence of the internal quantum efficiency of the light-emitting diode, wherein I₁<I₂, at each of these current values, respectively, full power P₁ and P₂ of optical radiation of the light-emitting diode is measured, then at each of these current values through the LED additionally passing alternating harmonic current of small amplitude I_m < I₁ and values are measured accordingly ƒ_3∂B1 and ƒ_3∂B2 of the electroluminescence modulation threshold frequency and the value of the internal quantum output η light-emitting diode at current I₁ and I₂ is calculated by the proposed formulas.

EFFECT: advantages of the invention are reduction of hardware costs, labour intensity and time of measurement when realizing the method.

1 cl, 1 dwg