FIELD: LEDs.
SUBSTANCE: method for measuring the internal quantum yield of a LED, according to which an electric current is passed though the LED and, at a given value of constant current, from the range of currents corresponding to an increase in the internal quantum efficiency of the LED, the power of the optical emission of the LED is measured; it is measured at several arbitrarily selected values of the electric current Ik, which are in the range of currents corresponding to the increase in the internal quantum efficiency of the LED, the experimental watt-ampere characteristic obtained Pk(Ik) is approximated by the least-squares method by a function of the form based on the approximation results, the parameters m and q of the approximating function are determined, and the value of the internal quantum output η of the LED at an arbitrary value of the current in a given range is calculated by the formula
EFFECT: reduction of hardware costs, laboriousness and measurement time, as well as expansion of the functionality of the method.
1 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR MEASURING INTERNAL QUANTUM OUTPUT OF LIGHT-EMITTING DIODE | 2020 |
|
RU2740433C1 |
METHOD FOR MEASURING LED THRESHOLD CURRENT | 2023 |
|
RU2807500C1 |
METHOD FOR ASSESSING QUALITY OF HETEROSTRUCTURE OF SEMICONDUCTOR LASER | 2015 |
|
RU2601537C1 |
IMPULSE INJECTION LASER | 2006 |
|
RU2361343C2 |
VERTICAL-EMITTING LASER WITH INTRACAVITY CONTACTS AND DIELECTRIC MIRROR | 2016 |
|
RU2704214C1 |
MANUFACTURING PROCESS FOR LIGHT-EMITTING DIODE STRUCTURES | 1987 |
|
RU1517657C |
SUPERLUMINESCENT DIODE | 0 |
|
SU1139337A1 |
METHOD FOR MEASURING QUANTUM EFFICIENCY OF INFRARED PHOTODIODE RECEIVERS | 2023 |
|
RU2807168C1 |
METHOD OF INSPECTING QUALITY OF LED STRUCTURE | 2012 |
|
RU2521119C1 |
SEMICONDUCTOR VERTICALLY-EMITTING LASER WITH INTRACAVITY CONTACTS | 2015 |
|
RU2611555C1 |
Authors
Dates
2023-01-30—Published
2022-07-26—Filed