FIELD: production of composite materials.
SUBSTANCE: disclosed is a method of producing a composite SiC substrate, having a substrate of polycrystalline SiC and a layer of monocrystalline SiC on it, comprising steps of in which form a thin film of monocrystalline SiC on one main surface of the carrier substrate, mechanically processing the surface of the thin monocrystalline SiC film to impart roughness and removing defects caused by machining to form a monocrystalline SiC layer, having a surface that is more rough than the surface of the layer adjacent to the support substrate, wherein the rough surface is composed of the inclined surface segments, which are randomly oriented relative to direction of perpendicular to surface of layer adjacent to bearing substrate, depositing polycrystalline SiC on the rough surface of the monocrystalline SiC layer by a chemical vapor deposition method, thereby forming a polycrystalline SiC substrate, in which close-packed planes of polycrystalline SiC crystals are randomly oriented relative to the direction of the perpendicular to the surface of the monocrystalline SiC layer adjacent to the carrier substrate, and then carrying carrier is physically and/or chemically removed.
EFFECT: present invention improves adhesion between a polycrystalline SiC substrate and a monocrystalline SiC layer without creation of any defects of the crystallographic structure in the layer of monocrystalline SiC and without the need for an intermediate layer between the substrate of polycrystalline SiC and the layer of monocrystalline SiC.
8 cl, 11 dwg
