FIELD: chemistry.
SUBSTANCE: invention relates to technology of making nanostructures and can be used in making new materials in micro- and optoelectonics, light-emitting-diode lamps, power electronics and other areas of semiconductor engineering. The surface of a silicon target is exposed to pulses of accelerated carbon ions with pulse duration of the ion beam in the range of 10-8 -10-6 s, current density in the pulse of 10-102 A/cm2, with ion energy of 104-106 eV and 102-104 pulses acting on the target. X-ray diffraction technique, photoluminescence and transmission electron microscopy are used to analyse the target.
EFFECT: invention increases uniformity of size of nanoparticles and simplifies realisation of the method in technological purposes.
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Authors
Dates
2010-07-10—Published
2009-03-02—Filed