LOW-TEMPERATURE OPERATIONAL AMPLIFIER WITH HIGH ATTENUATION OF INPUT IN-PHASE SIGNAL ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/34 

Abstract RU 2732583 C1

FIELD: radio engineering; analogue microelectronics.

SUBSTANCE: amplifier comprises input field-effect transistors with combined sources, current mirrors, additional field-effect transistor, auxiliary resistor, additional current input connected to the gate of the first additional field-effect transistor.

EFFECT: technical result consists in improvement of coefficient of attenuation of input in-phase signals of OA for operation at low temperatures, having a significant effect on errors of classical analogue interfaces.

1 cl, 8 dwg

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Authors

Prokopenko Nikolaj Nikolaevich

Zhuk Aleksej Andreevich

Pakhomov Ilya Viktorovich

Budyakov Petr Sergeevich

Dates

2020-09-21Published

2020-01-30Filed