MAGNETORESISTIVE MAGNETIC FIELD SENSOR Russian patent published in 2020 - IPC G01R33/02 

FIELD: automatics; magnetometry.

SUBSTANCE: magnetoresistive magnetic field sensor comprising a bridge measuring circuit from magnetoresistors, formed on a dielectric substrate from a magnetically soft ferromagnetic metal film with low-resistive shunts of non-magnetic metal applied on resistors, oriented at angle of 45 degrees to the length of the strip, coil Off/Set from conductive material film, wherein in order to expand the range of controlled fields and simplify the manufacturing technology, the coil is deposited on the back side of the substrate relative to the magnetoresistors, formed magnetoresistive structure is coated with compound applied in magnetic field, and material of magnetoresistors is alloy with negative coefficient of magnetostriction.

EFFECT: magnetoresistance magnetic field sensor is proposed.

1 cl, 3 dwg