METHOD TO MANUFACTURE MAGNETORESISTIVE SENSOR Russian patent published in 2014 - IPC H01L43/12 

FIELD: measurement equipment.

SUBSTANCE: invention relates to the field of automatics and magnetometry. The method to manufacture a magnetoresistive sensor consists in formation of a Winston bridge on an insulating substrate by means of vacuum sputtering of a magnetoresistive structure with subsequent formation of magnetoresistive strips by the method of photolithographic etching and sputtering of the first conducting layer with subsequent formation of links, conductors and contact sites by the method of photolithographic etching, application of the first insulating layer from polyimide with its subsequent imidisation in vacuum, sputtering of the second conducting layer and formation of a flat inductance coil on it "set/reset" by the method of photolithographic etching, application of the second insulating layer from polyimide with its subsequent imidisation in vacuum, sputtering of the third conducting layer and formation of a flat inductance "offset" coil on it by the method of photolithographic etching, application of a structural protection with subsequent opening of contact sites of the first conducting layer, at the same time conducting layers are produced by means of vacuum sputtering of a Cr-Cu-Cr structure, which is etched in layers and selectively, and on contact sites that are on the first conducting layer, they additionally create a film of Al by means of its sputtering on the sensor after application of the structural protection with subsequent photolithographic etching.

EFFECT: invention of the method provides for improved technical characteristics: increased specific sensitivity, reduced unbalance and lower cost of a sensor.

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