METHOD OF PRODUCING MAGNETORESISTIVE SENSOR Russian patent published in 2017 - IPC H01L43/12 

FIELD: measurement equipment.

SUBSTANCE: method involves the production of Winston bridge by successive vacuum deposition on the substrate layers FeNi(FeNiCo), Ta, FeNi(FeNiCo) and subsequent photolithographic etching, making two film inductors "set/reset" and "offset" by spraying the conductive layers and the subsequent photolithographic etching, deposition of insulation between the bridge and Winston coils, causing structural protection. In the manufacture of the bridge to Winston Ta layer in one cycle of pumping vacuum chamber sputtered layer of Cu, and then a layer of FeNi(FeNiCo) to form a structure of FeNi(FeNiCo)-Ta-Cu-FeNi(FeNiCo), from which, by photolithographic etching through the first photomask combined form a Wheatstone bridge circuit with patterned conductive layer comprising strips jumper wires and the contact pads, and then through another photomask formed magnetoresistive strips and Barber pole topology to form a Wheatstone bridge magnetoresistive strips of FeNi(FeNiCo)-Ta and Barber poles of Cu-FeNi(FeNiCo).

EFFECT: increase the resolution of the output signal due to increasing stability and improving the adaptability of the sensor manufacturing by reducing the number of operations of its manufacturing process.

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