METHOD OF MEASURING MAGNETOSTRICTION OF THIN FILMS Russian patent published in 2020 - IPC G01R33/16 

Abstract RU 2739161 C1

FIELD: measurement.

SUBSTANCE: invention relates to measurement equipment and can be used for measurement of magnetostriction of thin films. Method consists in measurement of alternating voltage occurring on piezoelectric substrate, on which magnetostrictive material is applied, when structure is placed in alternating and constant magnetic fields. Due to magnetostriction in the magnetostrictive phase of the composite there are mechanical stresses, which are transmitted to the piezoelectric phase, as a result of which electric voltage appears on the sample, which value is proportional to piezomagnetic coefficient, which is derivative of magnetostriction by magnetic field. Shifting dependence of value of occurring voltage on magnetization field, obtaining field characteristic of magnetoelectric effect, integral characteristic of which is to magnet factor to accuracy is magnetostrictive curve.

EFFECT: technical result consists in simplifying the method and improving accuracy of determining magnetostriction based on the effect of the substrate.

1 cl, 5 dwg, 1 tbl

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RU 2 739 161 C1

Authors

Filippov Dmitrij Aleksandrovich

Laletin Vladimir Mikhajlovich

Poddubnaya Natalya Nikitichna

Dates

2020-12-21Published

2020-04-07Filed