BROADBAND EMITTER OF INFRARED AND TERAHERTZ WAVELENGTH RANGES Russian patent published in 2020 - IPC H01L33/06 H01L33/08 H01L33/34 B82Y40/00 

FIELD: semiconductor optoelectronics.

SUBSTANCE: invention relates to semiconductor optoelectronics, specifically to sources of radiation of infrared and terahertz wavelength ranges, intended, mainly for use in optoelectronics, in measurement equipment, in medicine, in safety systems, as well as elemental base of quantum computers. Proposed radiator has base 1 of silicon of n-type conductivity, on which a coating is formed in the form of an epitaxial film of silicon carbide 2, under which there is a nanoporous transition structure 3 from silicon to silicon carbide. Coating surface is doped with boron to form a quantum well of 4 p-type conductivity with thickness less than 5 nm and two-dimensional density of boron within 10¹²-10¹⁴ cm^-2. Quantum well is confined by two delta barriers 5 with boron impurity concentration exceeding 5×10²¹ cm^-3, thickness of each of which does not exceed 3 nm. Self-organized microresonators 6 are formed inside the quantum well in the form of crystallographically oriented pyramids. There are formed contacts 7 on the coating.

EFFECT: increasing total specific power in the entire spectral range and increasing the efficiency of the emitter.

1 cl, 6 dwg