PHOTODETECTOR BUILT AROUND QUANTUM-WELL SEMICONDUCTOR STRUCTURE Russian patent published in 1994 - IPC

FIELD: optoelectronics. SUBSTANCE: photodetector built around quantum-well semiconductor structure has semi-insulating GaAs substrate with i-GaAs buffer layer, first n-GaAs contacting layer, system of alternating Al_xGa_1-xAs and GaAs layers, silicon admixture being introduced in one of alternating layers up to alloying level of 2·10¹⁸ см^-3, and second n-GaAs contact layer; silicon admixture is introduced in Al_xGa_1-xAs layer in the form of monoatomic layer spaced at distance not greater layers. EFFECT: enlarged functional capabilities. 3 dwg