SILICON CARBIDE SWITCHING DEVICE AND PRODUCTION METHOD THEREOF Russian patent published in 2021 - IPC H01L29/06 H01L29/78 

FIELD: physics.

SUBSTANCE: invention discloses silicon carbide switching device and its manufacturing method; device is used to reduce the ratio of resistance of the channel to resistance of the device in an on state. According to the present invention, the upper structure of the device is twice subjected to epitaxial growth processing, wherein the impurity concentration of the secondary epitaxial channel area is lower than in the region of lateral doping of the pocket of the P-type; impurity concentration of the secondary epitaxial N+ area is much higher than in the region of lateral doping of the P-type pocket; concentration of admixture of N+ area is much higher, than in area of lateral alloying of pocket of P-type. Due to such structure, channel length on side wall of secondary epitaxial channel area depends on thickness of epitaxial growth. Switching on/off of the device according to the present invention is carried out by means of two methods. Channel on the side wall of the secondary epitaxial channel area is very short, and the current path of the epitaxial drift layer can be switched off under condition of generation of sufficiently high voltage drop during disconnection without allowance for the channel closing effect at high voltage; respectively, present invention has great advantages in comparison with previous level of equipment; at the same time, a wide current path of the epitaxial drift layer is used and a positive preset voltage is maintained, which provides advantages of the present invention compared to a standard silicon carbide-effect transistor with a control p-n junction.

EFFECT: invention discloses silicon carbide switching device and its production method.

9 cl, 12 dwg