FIELD: transistors.
SUBSTANCE: invention relates to methods of manufacture of a single cell structure of a silicone-carbide MOS field transistor. According to the invention, the method of manufacture of a structure of a silicone-carbide MOS field transistor is proposed, wherein the area of the conducting channel is curved and consists of three areas, wherein the fourth areas are located between the first adjacent areas causing the total length of the area of the vertical conducting channel to be significantly increased, thus reducing the ratio of channel resistance to on resistance.
EFFECT: technical result is an improved method of manufacture of a single cell structure of a silicone-carbide MOS field transistor.
8 cl, 9 dwg
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