FIELD: memory structures.
SUBSTANCE: invention relates to the field of memory structures using a biological model, in particular to a method for recording and reading information for permanent memory elements of neuromorphic systems. The technical result is achieved due to the method, which includes changing the conductivity of a single crystal of black phosphorus, as well as recording and reading, which are performed due to the controlled drift of vacancies near the metal-black phosphorus contact when a voltage is applied to the contact from less than -2 V to -10 V for recording and +2 V to more than -2 V for reading.
EFFECT: technical result consists in providing information recording for a long-term resistive memory system with a single recording and reading channel without the need to use external electric fields of the transistor gate to record information.
1 cl, 1 dwg
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