FIELD TRANSISTOR WITH MEMORY CELL Russian patent published in 2015 - IPC H01L29/82 B82B1/00 

FIELD: radio engineering, communication.

SUBSTANCE: invention pertains to nanoelectronics, and more specifically - to field transistors with a flash memory cell under the gate. The said transistor, based on a heterostructure, contains a source and a drain on the baseplate, contacts, placed onto the source and drain, a channel, a gate with a memory cell. The latter comprises the first dielectric layer, adjacent to the gate, the second dielectric layer, adjacent to the channel, and a layer of a non-magnetic dielectric material with 3d metal nanoparticles distributed within it. The particles are 2-5 mm in size and their quantity is 20-60 at %. This layer is placed between the first and the second dielectric layers.

EFFECT: higher switching speed of the transistor and prolonged storage time of the recorded information.

6 cl, 6 dwg