METHOD FOR NON-DAMAGING SURFACE MOUNTING OF SILICON CRYSTALS AND A3B5 TYPE CRYSTALS BY USING SHS FOIL DEPOSITED IN FORM OF METALLIZING MULTILAYER NANOSTRUCTURED COATING ON SURFACE OF THESE CRYSTALS Russian patent published in 2021 - IPC H01L21/77 H01L21/60 

FIELD: latest generation electronic equipment manufacturing.

SUBSTANCE: invention relates to the field of production of the latest generation of electronics, namely, to methods for connecting a MOSFET component base based on A3B5 type crystals using reaction multilayer foils. The method for non-damaging surface mounting of silicon crystals or A3B5 type crystals by using a SHS foil deposited in the form of a metallizing multilayer nanostructured coating on the surface of these crystals consists in the formation of a multilayer nanostructured coating with a thickness of 30-100 mcm, consisting of an alternating pair of materials capable of reacting with each other in self-propagating high-temperature synthesis and selected from nickel, aluminum, copper, niobium, cobalt, titanium, molybdenum, tantalum, carbon, silicon, boron, nitrogen, at the same time, the thickness of each layer is 2-20 nm, provided that the surface intended for placing the crystal is metallized with a low-melting metal with a melting temperature not higher than 180°C and capable of ensuring the wettability of the surface of the multilayer nanostructure, followed by the fixation and clamping of the connected surfaces, followed by the initiation of the SHS reaction by a short-term energy pulse.

EFFECT: obtaining a strong connection of silicon crystals or crystals of the A3B5 type with metallized materials while preserving the functional properties of both the A3B5 crystals themselves and the final electronic assembly based on them, with the possibility of their desoldering, if necessary, without destroying silicon crystals and crystals of the A3B5 type.

3 cl, 10 dwg, 2 tbl