FIELD: electrical engineering.
SUBSTANCE: tunable ENZ material can act as a broadband absorber, preferably using a package of ultra-thin conductive layers having an epsilon near-zero (hereinafter – ENZ) mode for dielectric permittivity at different wavelengths. The conductive materials may include at least partially transparent conductive layers of transition metal oxides or nitrides with different electron concentrations and therefore different ENZ frequencies to provide a wide range of energy absorption. The layer (s) can be directly tuned to different frequencies to achieve high absorption levels at deep sub–wave ENZ thicknesses. The applied electrical bias can create an electron-rich area / depleted area in a semiconductor ENZ device and allows the plasma frequency and therefore high absorption levels in the device to be controlled. Additionally, for a package of layers, the charge carrier concentration may vary from layer to layer.
EFFECT: present disclosure provides a system and method for a tunable ENZ material that can alter the absorption of radiant energy.
21 cl, 10 dwg
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Authors
Dates
2021-09-08—Published
2018-05-11—Filed