HIGH-FREQUENCY GALLIUM NITRIDE AMPLIFIER TRANSISTOR Russian patent published in 2024 - IPC H01L29/778 

FIELD: electricity.

SUBSTANCE: use for unipolar positive supply of transistors in amplification circuits. Essence of the invention consists in the fact that in the proposed transistor design, which includes a substrate and a buffer layer, a GaN channel layer, a first barrier sublayer Al_yGa_1-yN, second barrier sublayer Al_xGa_1-xN, spatially separated electrodes of source, gate and drain, molar fraction of aluminium in second barrier sublayer is more than 50%, thickness of the first barrier sublayer is equal to 1–2 nm, thickness of the second barrier sublayer is 1–6 nm.

EFFECT: enabling reduction of electron density in the transistor channel.

1 cl, 2 dwg