METHOD FOR PRODUCING THIN FILMS OF REFRACTORY OR MEDIUM-MELTING METALS OR THEIR COMPOUNDS BY THERMAL ENERGY OF SELF-PROPAGATING HIGH-TEMPERATURE SYNTHESIS Russian patent published in 2021 - IPC C23C14/24 C30B23/06 C30B29/02 C30B29/46 C30B29/52 

Abstract RU 2761594 C1

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in the production of thin films of refractory or medium-melting metals, or their compounds. The method includes preliminary preparation of the substrate 6, sealing of the installation for thermal vacuum evaporation, heating of the evaporated materials to generate a directed flow of particles and their condensation on the substrate in vacuum, while heating refractory or medium-melting metals or their compounds to the evaporation temperature is carried out by the thermal energy of a solid-phase exothermic reaction of self-propagating high-temperature synthesis of a charge 2 consisting of a mixture of powders of refractory metals and carbon placed in a crucible 1, above which there is a boat 3 with evaporated metals or their compounds 4. Mixtures of titanium or tantalum powders with carbon can be used as a charge for the reaction of self-propagating high-temperature synthesis.

EFFECT: invention makes it possible to obtain films from refractory, or medium-melting metals, or their compounds, reduce energy consumption and simplify technological equipment.

3 cl, 2 dwg, 5 ex

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RU 2 761 594 C1

Authors

Esayan Sarik Zhorikovich

Loryan Vazgen Edvardovich

Oganesyan Gagik Araratovich

Dates

2021-12-10Published

2021-09-24Filed