FIELD: physics.
SUBSTANCE: disclosed method relates to electronics and optoelectronics and can be used to create structures of active elements of nano- and optoelectronics and integrated circuits based thereon. To control the size of quantum dots, a drop epitaxy method is used, in which the In metal drops formed at the first stage under the effect of the background pressure As change their size regardless of their density, which depends on the value of the background pressure, thereby determining the final size of the semiconductor quantum dots InAs after their crystallisation.
EFFECT: independent control of the size of semiconductor quantum dots A3B5.
1 cl, 1 dwg
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