FIELD: semiconductor industry.
SUBSTANCE: invention relates to an aqueous composition for chemical-mechanical polishing (CMP) of the surface of semiconductor materials, in particular Ge, GaAs, PbTe, CdSb, InAs, ZnAs2, etc. A composition for CMP is proposed with the following ratio of components, wt. %: nanoscale particles of colloidal silicon dioxide 5-30; monoethanolamine 5.5-10; hydrogen peroxide (20-30%) 3-4; glycerin 2-4; distilled water the rest.
EFFECT: proposed composition makes it possible to obtain defect–free mirror-smooth (nano- and sub-rough) surfaces of semiconductor materials without scratches and chips and to improve the quality of substrates in various production processes during the manufacture of the element base.
3 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| COMPOUND FOR CHEMICAL-MECHANICAL POLISHING OF SEMICONDUCTOR CRYSTAL SURFACE | 0 |
|
SU1701759A1 |
| METHOD OF FINISHING CHEMICAL-MECHANICAL POLISHING OF InAs PLATES | 2014 |
|
RU2582904C1 |
| METHOD OF POLISHING SEMICONDUCTOR MATERIALS | 2011 |
|
RU2457574C1 |
| METHOD FOR COMBINED CHEMICAL AND MECHANICAL POLISHING OF PLATES FROM GALLIUM ARSENIDE | 1990 |
|
RU1715133C |
| PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SiGe MATERIAL IN PRESENCE OF CMP (CHEMICAL MECHANICAL POLISHING) COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND | 2012 |
|
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| COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING CONTAINING POLYVINYL PHOSPHON ACID AND DERIVATIVES THEREOF | 2011 |
|
RU2598046C2 |
| PROCESS OF POLISHING SEMICONDUCTOR PLATES | 1991 |
|
RU2007784C1 |
| AQUEOUS POLISHING COMPOSITION AND METHOD FOR CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES, HAVING STRUCTURED OR UNSTRUCTURED DIELECTRIC LAYERS WITH LOW DIELECTRIC CONSTANT | 2011 |
|
RU2589482C2 |
| POLISH COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING | 1993 |
|
RU2082738C1 |
| METHOD FOR CHEMICAL-MECHANICAL POLISHING OF GALLIUM ARSENIDE PLATES | 2014 |
|
RU2545295C1 |
