FIELD: chemistry.
SUBSTANCE: invention relates to a polishing composition for chemical-mechanical polishing of plates of monocrystalline indium antimonide. Disclosed is a polishing composition comprising a sol containing silicon dioxide particles with an average particle size of 60 nm with a weight content of particles in ash of 50 wt.%, and aqueous solutions of tartaric and lactic acids as a complexing agent, aqueous solutions of hydrogen peroxide and ammonium paramolybdate, as well as an aqueous solution of sulfamic acid as a pH stabilizing agent.
EFFECT: providing uniform stable polishing of the entire surface of the plate of monocrystalline indium antimonide and obtaining surface roughness of not more than 0.5 nm, without scratches and through chips.
1 cl, 1 tbl, 5 ex
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| METHOD FOR INDIUM ANTIMONIDE POLISHING SOLUTION PREPARING | 0 |
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